JAN1N5811US Microchip / Microsemi
| Anzahl | Privatkunde |
|---|---|
| 1+ | 13.32 EUR |
| 10+ | 13.28 EUR |
| 25+ | 13.26 EUR |
| 100+ | 12.96 EUR |
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Technische Details JAN1N5811US Microchip / Microsemi
Description: DIODE STANDARD 150V 3A B SQMELF, Qualification: MIL-PRF-19500/477, Grade: Military, Current - Reverse Leakage @ Vr: 5 µA @ 150 V, Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A, Voltage - DC Reverse (Vr) (Max): 150 V, Part Status: Active, Operating Temperature - Junction: -65°C ~ 175°C, Supplier Device Package: B, SQ-MELF, Current - Average Rectified (Io): 6A, Capacitance @ Vr, F: 60pF @ 10V, 1MHz, Technology: Standard, Reverse Recovery Time (trr): 30 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: SQ-MELF, B, Packaging: Bulk.
Weitere Produktangebote JAN1N5811US nach Preis ab 13.17 EUR bis 14.18 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||
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JAN1N5811US | Microchip Technology |
 Description: DIODE STANDARD 150V 3A B SQMELFQualification: MIL-PRF-19500/477 Grade: Military Current - Reverse Leakage @ Vr: 5 µA @ 150 V Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A Voltage - DC Reverse (Vr) (Max): 150 V Part Status: Active Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: B, SQ-MELF Current - Average Rectified (Io): 6A Capacitance @ Vr, F: 60pF @ 10V, 1MHz Technology: Standard Reverse Recovery Time (trr): 30 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: SQ-MELF, B Packaging: Bulk |
auf Bestellung 161 Stücke: Lieferzeit 10-14 Tag (e) |
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| JAN1N5811US |
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Hersteller: Microchip Technology
Description: DIODE STANDARD 150V 3A B SQMELF
Qualification: MIL-PRF-19500/477
Grade: Military
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: B, SQ-MELF
Current - Average Rectified (Io): 6A
Capacitance @ Vr, F: 60pF @ 10V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SQ-MELF, B
Packaging: Bulk
Description: DIODE STANDARD 150V 3A B SQMELF
Qualification: MIL-PRF-19500/477
Grade: Military
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: B, SQ-MELF
Current - Average Rectified (Io): 6A
Capacitance @ Vr, F: 60pF @ 10V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SQ-MELF, B
Packaging: Bulk
auf Bestellung 161 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 14.18 EUR |
| 100+ | 13.17 EUR |