JAN1N5811US Microchip / Microsemi
auf Bestellung 861 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 12.87 EUR |
| 10+ | 12.72 EUR |
| 25+ | 12.58 EUR |
| 100+ | 12.02 EUR |
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Technische Details JAN1N5811US Microchip / Microsemi
Description: DIODE GEN PURP 150V 6A B SQ-MELF, Packaging: Bulk, Package / Case: SQ-MELF, B, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 30 ns, Technology: Standard, Capacitance @ Vr, F: 60pF @ 10V, 1MHz, Current - Average Rectified (Io): 6A, Supplier Device Package: B, SQ-MELF, Operating Temperature - Junction: -65°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 150 V, Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A, Current - Reverse Leakage @ Vr: 5 µA @ 150 V, Grade: Military, Qualification: MIL-PRF-19500/477.
Weitere Produktangebote JAN1N5811US
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| JAN1N5811US | Hersteller : MICROSEMI |
 MELF/ULTRA FAST RECTIFIER (LESS THAN 100NS) 1N5811Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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JAN1N5811US | Hersteller : Microchip Technology |
Description: DIODE GEN PURP 150V 6A B SQ-MELF Packaging: Bulk Package / Case: SQ-MELF, B Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Capacitance @ Vr, F: 60pF @ 10V, 1MHz Current - Average Rectified (Io): 6A Supplier Device Package: B, SQ-MELF Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A Current - Reverse Leakage @ Vr: 5 µA @ 150 V Grade: Military Qualification: MIL-PRF-19500/477 |
Produkt ist nicht verfügbar |
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| JAN1N5811US | Hersteller : Semtech Corporation |
Description: D MET 6A SFST 150V HR SM Packaging: Bulk Part Status: Discontinued at Digi-Key |
Produkt ist nicht verfügbar |