Technische Details JAN1N5822US Microsemi
Description: DIODE SCHOTTKY 40V 3A B SQ-MELF, Packaging: Bulk, Package / Case: SQ-MELF, B, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Current - Average Rectified (Io): 3A, Supplier Device Package: B, SQ-MELF, Operating Temperature - Junction: -65°C ~ 150°C, Grade: Military, Voltage - DC Reverse (Vr) (Max): 40 V, Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A, Qualification: MIL-PRF-19500/620.
Weitere Produktangebote JAN1N5822US
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JAN1N5822US | Hersteller : Microchip Technology |
 Rectifier Diode Schottky 40V 3A 2-Pin E-MELF Bag |
Produkt ist nicht verfügbar |
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JAN1N5822US | Hersteller : Microchip Technology |
Description: DIODE SCHOTTKY 40V 3A B SQ-MELF Packaging: Bulk Package / Case: SQ-MELF, B Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 3A Supplier Device Package: B, SQ-MELF Operating Temperature - Junction: -65°C ~ 150°C Grade: Military Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A Qualification: MIL-PRF-19500/620 |
Produkt ist nicht verfügbar |