
JAN1N6471US Microchip Technology

Description: TVS DIODE 12VWM 22.6VC G-MELF
Packaging: Bulk
Package / Case: SQ-MELF, G
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 374A (8/20µs)
Voltage - Reverse Standoff (Typ): 12V
Supplier Device Package: G-MELF (D-5C)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 13.6V
Voltage - Clamping (Max) @ Ipp: 22.6V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500/552
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Technische Details JAN1N6471US Microchip Technology
Description: TVS DIODE 12VWM 22.6VC G-MELF, Packaging: Bulk, Package / Case: SQ-MELF, G, Mounting Type: Surface Mount, Type: Zener, Operating Temperature: -55°C ~ 175°C (TJ), Applications: General Purpose, Current - Peak Pulse (10/1000µs): 374A (8/20µs), Voltage - Reverse Standoff (Typ): 12V, Supplier Device Package: G-MELF (D-5C), Unidirectional Channels: 1, Voltage - Breakdown (Min): 13.6V, Voltage - Clamping (Max) @ Ipp: 22.6V, Power - Peak Pulse: 1500W (1.5kW), Power Line Protection: No, Grade: Military, Part Status: Active, Qualification: MIL-PRF-19500/552.
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JAN1N6471US | Hersteller : Microsemi |
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