JAN1N6638US Microchip Technology
Hersteller: Microchip TechnologyDescription: DIODE GP 150V 300MA B SQ-MELF
Packaging: Bulk
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 300mA
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 150 V
Qualification: MIL-PRF-19500/578
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Technische Details JAN1N6638US Microchip Technology
Description: DIODE GP 150V 300MA B SQ-MELF, Packaging: Bulk, Package / Case: DO-213AB, MELF, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 20 ns, Technology: Standard, Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz, Current - Average Rectified (Io): 300mA, Supplier Device Package: B, SQ-MELF, Operating Temperature - Junction: -65°C ~ 175°C, Grade: Military, Voltage - DC Reverse (Vr) (Max): 150 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA, Current - Reverse Leakage @ Vr: 500 nA @ 150 V, Qualification: MIL-PRF-19500/578.
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