JAN2N1890
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auf Bestellung 41 Stücke:
Lieferzeit 21-28 Tag (e)
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Technische Details JAN2N1890
Description: TRANS NPN 80V 0.5A TO5, Packaging: Bulk, Package / Case: TO-205AA, TO-5-3 Metal Can, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: -65°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 5V @ 15mA, 150mA, Current - Collector Cutoff (Max): 10nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V, Supplier Device Package: TO-5AA, Grade: Military, Part Status: Active, Current - Collector (Ic) (Max): 500 mA, Voltage - Collector Emitter Breakdown (Max): 80 V, Power - Max: 800 mW, Qualification: MIL-PRF-19500/225.
Weitere Produktangebote JAN2N1890
| Foto | Bezeichnung | Hersteller | Beschreibung |
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JAN2N1890 | Hersteller : Microchip Technology |
Description: TRANS NPN 80V 0.5A TO5 Packaging: Bulk Package / Case: TO-205AA, TO-5-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 5V @ 15mA, 150mA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Supplier Device Package: TO-5AA Grade: Military Part Status: Active Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 800 mW Qualification: MIL-PRF-19500/225 |
Produkt ist nicht verfügbar |
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| JAN2N1890 | Hersteller : Microchip / Microsemi |
 Bipolar Transistors - BJT Power BJT |
Produkt ist nicht verfügbar |