Technische Details JAN2N2219AL MICROSEMI
Description: TRANS NPN 50V 0.8A TO-5, Packaging: Bulk, Package / Case: TO-205AA, TO-5-3 Metal Can, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: -55°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA, Current - Collector Cutoff (Max): 10nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V, Supplier Device Package: TO-5, Grade: Military, Part Status: Active, Current - Collector (Ic) (Max): 800 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 800 mW, Qualification: MIL-PRF-19500/251.
Weitere Produktangebote JAN2N2219AL
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JAN2N2219AL | Hersteller : Microchip Technology |
 Description: TRANS NPN 50V 0.8A TO-5Packaging: Bulk Package / Case: TO-205AA, TO-5-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Supplier Device Package: TO-5 Grade: Military Part Status: Active Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 800 mW Qualification: MIL-PRF-19500/251 |
Produkt ist nicht verfügbar |
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| JAN2N2219AL | Hersteller : Microchip / Microsemi |
Bipolar Transistors - BJT Small-Signal BJT |
Produkt ist nicht verfügbar |