JAN2N2222A Microchip Technology
auf Bestellung 53 Stücke:
Lieferzeit 14-21 Tag (e)
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Technische Details JAN2N2222A Microchip Technology
Description: TRANS NPN 50V 0.8A TO-218, Packaging: Bulk, Package / Case: TO-206AA, TO-18-3 Metal Can, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: -65°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA, Current - Collector Cutoff (Max): 50nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V, Supplier Device Package: TO-218, Grade: Military, Part Status: Active, Current - Collector (Ic) (Max): 800 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 500 mW, Qualification: MIL-PRF-19500/255.
Weitere Produktangebote JAN2N2222A
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| JAN2N2222A | Hersteller : MICROSEMI |
TO-18/ NPN TRANSISTOR 2N2222AAnzahl je Verpackung: 1 Stücke |
auf Bestellung 40 Stücke: Lieferzeit 7-21 Tag (e) |
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JAN2N2222A | Hersteller : Microchip Technology |
Trans GP BJT NPN 50V 0.8A 500mW 3-Pin TO-18 Bag |
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JAN2N2222A | Hersteller : Microchip Technology |
Description: TRANS NPN 50V 0.8A TO-218Packaging: Bulk Package / Case: TO-206AA, TO-18-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Supplier Device Package: TO-218 Grade: Military Part Status: Active Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 500 mW Qualification: MIL-PRF-19500/255 |
Produkt ist nicht verfügbar |
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JAN2N2222A | Hersteller : Microchip / Microsemi |
Bipolar Transistors - BJT 40V 800mA 500mW Small-Signal BJT THT |
Produkt ist nicht verfügbar |

