Technische Details JAN2N2222AUA Microsemi
Description: TRANS NPN 50V 0.8A, Packaging: Bulk, Package / Case: 4-SMD, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: -65°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA, Current - Collector Cutoff (Max): 50nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V, Grade: Military, Current - Collector (Ic) (Max): 800 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 650 mW, Qualification: MIL-PRF-19500/255.
Weitere Produktangebote JAN2N2222AUA
| Foto | Bezeichnung | Hersteller | Beschreibung |
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JAN2N2222AUA | Hersteller : Microchip Technology |
 Trans GP BJT NPN 50V 0.8A 500mW 4-Pin UA Waffle |
Produkt ist nicht verfügbar |
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| JAN2N2222AUA | Hersteller : MICROSEMI |
UA/NPN SILICON SWITCHING TRANSISTOR 2N2222 Anzahl je Verpackung: 1 Stücke |
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| JAN2N2222AUA | Hersteller : Microchip Technology |
Description: TRANS NPN 50V 0.8A Packaging: Bulk Package / Case: 4-SMD Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Grade: Military Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 650 mW Qualification: MIL-PRF-19500/255 |
Produkt ist nicht verfügbar |