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JAN2N3440

JAN2N3440 Microsemi


LDS-0022-602208.pdf Hersteller: Microsemi
Bipolar Transistors - BJT Power BJT
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Technische Details JAN2N3440 Microsemi

Description: TRANS NPN 250V 1A TO39, Packaging: Bulk, Package / Case: TO-205AD, TO-39-3 Metal Can, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: -65°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA, Current - Collector Cutoff (Max): 2µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V, Supplier Device Package: TO-39, Grade: Military, Part Status: Discontinued at Digi-Key, Current - Collector (Ic) (Max): 1 A, Voltage - Collector Emitter Breakdown (Max): 250 V, Power - Max: 800 mW, Qualification: MIL-PRF-19500/368.

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JAN2N3440 Hersteller : MOTOROLA 8830-lds-0022-datasheet
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JAN2N3440 JAN2N3440 Hersteller : Microchip Technology 8830-lds-0022-datasheet Description: TRANS NPN 250V 1A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Supplier Device Package: TO-39
Grade: Military
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 800 mW
Qualification: MIL-PRF-19500/368
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