Technische Details JAN2N3440L
Description: TRANS NPN 250V 1A TO-5, Packaging: Bulk, Package / Case: TO-205AA, TO-5-3 Metal Can, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: -65°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA, Current - Collector Cutoff (Max): 2µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V, Supplier Device Package: TO-5, Grade: Military, Part Status: Active, Current - Collector (Ic) (Max): 1 A, Voltage - Collector Emitter Breakdown (Max): 250 V, Power - Max: 800 mW, Qualification: MIL-PRF-19500/368. 
Weitere Produktangebote JAN2N3440L
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis | 
|---|---|---|---|---|---|
|  | JAN2N3440L | Hersteller : Microchip Technology |  Description: TRANS NPN 250V 1A TO-5 Packaging: Bulk Package / Case: TO-205AA, TO-5-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA Current - Collector Cutoff (Max): 2µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V Supplier Device Package: TO-5 Grade: Military Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 250 V Power - Max: 800 mW Qualification: MIL-PRF-19500/368 | Produkt ist nicht verfügbar | |
| JAN2N3440L | Hersteller : Microchip / Microsemi |  Bipolar Transistors - BJT 250V 1A 800mW Long-Lead Power BJT THT | Produkt ist nicht verfügbar |