Technische Details JAN2N3507 MOTOROLA
Description: TRANS NPN 50V 3A TO39, Packaging: Bulk, Package / Case: TO-205AD, TO-39-3 Metal Can, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: -65°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1.5V @ 250mA, 2.5A, DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 1.5A, 2V, Supplier Device Package: TO-39 (TO-205AD), Grade: Military, Current - Collector (Ic) (Max): 3 A, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 1 W, Qualification: MIL-PRF-19500/349.
Weitere Produktangebote JAN2N3507
Foto | Bezeichnung | Hersteller | Beschreibung |
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JAN2N3507 | Hersteller : Microchip Technology |
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auf Bestellung 80 Stücke: Lieferzeit 10-14 Tag (e) |
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JAN2N3507 | Hersteller : Semicoa |
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Produkt ist nicht verfügbar |
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JAN2N3507 | Hersteller : Microchip Technology |
![]() Packaging: Bulk Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 250mA, 2.5A DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 1.5A, 2V Supplier Device Package: TO-39 (TO-205AD) Grade: Military Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 1 W Qualification: MIL-PRF-19500/349 |
Produkt ist nicht verfügbar |