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JAN2N3700

JAN2N3700 Microchip / Microsemi

2N3700_LDS_0185_2_MIL_PRF_19500_391.pdf Hersteller: Microchip / Microsemi
Bipolar Transistors - BJT 80V 1A 500mW Small-Signal BJT THT
auf Bestellung 282 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+6 EUR
10+5.97 EUR
25+5.93 EUR
100+5.79 EUR
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Technische Details JAN2N3700 Microchip / Microsemi

Description: TRANS NPN 80V 1A TO-18-3, Packaging: Bulk, Package / Case: TO-206AA, TO-18-3 Metal Can, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: -65°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA, Current - Collector Cutoff (Max): 10nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V, Supplier Device Package: TO-18-3, Grade: Military, Current - Collector (Ic) (Max): 1 A, Voltage - Collector Emitter Breakdown (Max): 80 V, Power - Max: 500 mW, Qualification: MIL-PRF-19500.

Weitere Produktangebote JAN2N3700 nach Preis ab 6.27 EUR bis 6.27 EUR

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JAN2N3700 JAN2N3700 Hersteller : Microchip Technology LDS-0185_2N3700.pdf Description: TRANS NPN 80V 1A TO-18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 10V
Supplier Device Package: TO-18
Grade: Military
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/391
auf Bestellung 75 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.27 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
JAN2N3700 Hersteller : MOTOROLA LDS-0185_2N3700.pdf 2N3019-D.PDF
auf Bestellung 15000 Stücke:
Lieferzeit 21-28 Tag (e)
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JAN2N3700 Hersteller : onsemi 2N3019-D.PDF Description: TRANS NPN 80V 1A TO-18-3
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-18-3
Grade: Military
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500
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