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JAN2N3766 Microsemi

Hersteller: Microsemi
Trans GP BJT NPN 60V 4A 25000mW 3-Pin(2+Tab) TO-66 Tray

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Technische Details JAN2N3766 Microsemi

Description: TRANS NPN 60V 4A TO66, Packaging: Bulk, Package / Case: TO-213AA, TO-66-2, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: -65°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 2.5V @ 100mA, 1A, Current - Collector Cutoff (Max): 500µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 500mA, 5V, Supplier Device Package: TO-66 (TO-213AA), Part Status: Active, Current - Collector (Ic) (Max): 4 A, Voltage - Collector Emitter Breakdown (Max): 60 V, Power - Max: 25 W, Grade: Military, Qualification: MIL-PRF-19500/518.

Weitere Produktangebote JAN2N3766

Foto	Bezeichnung	Hersteller	Beschreibung	Verfügbarkeit	Preis ohne MwSt
	JAN2N3766	Hersteller : MICROSEMI	TO66/NPN TRANSISTOR 2N3766 Anzahl je Verpackung: 1 Stücke	Produkt ist nicht verfügbar
	JAN2N3766	Hersteller : Microchip Technology	Description: TRANS NPN 60V 4A TO66 Packaging: Bulk Package / Case: TO-213AA, TO-66-2 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 2.5V @ 100mA, 1A Current - Collector Cutoff (Max): 500µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 500mA, 5V Supplier Device Package: TO-66 (TO-213AA) Part Status: Active Current - Collector (Ic) (Max): 4 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 25 W Grade: Military Qualification: MIL-PRF-19500/518	Produkt ist nicht verfügbar