JAN2N5154 Microchip Technology
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)
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Technische Details JAN2N5154 Microchip Technology
Description: TRANS NPN 80V 2A TO39, Packaging: Bulk, Package / Case: TO-205AD, TO-39-3 Metal Can, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: -65°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A, Current - Collector Cutoff (Max): 50µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V, Supplier Device Package: TO-39 (TO-205AD), Grade: Military, Current - Collector (Ic) (Max): 2 A, Voltage - Collector Emitter Breakdown (Max): 80 V, Power - Max: 1 W, Qualification: MIL-PRF-19500/544.
Weitere Produktangebote JAN2N5154
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| JAN2N5154 | Hersteller : Microsemi |
 Trans GP BJT NPN 80V 2A 1000mW 3-Pin TO-39 Bag |
auf Bestellung 2 Stücke: Lieferzeit 14-21 Tag (e) |
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| JAN2N5154 | Hersteller : MOTOROLA |
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auf Bestellung 2200 Stücke: Lieferzeit 21-28 Tag (e) |
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JAN2N5154 | Hersteller : Microchip Technology |
Description: TRANS NPN 80V 2A TO39 Packaging: Bulk Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A Current - Collector Cutoff (Max): 50µA DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V Supplier Device Package: TO-39 (TO-205AD) Grade: Military Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 1 W Qualification: MIL-PRF-19500/544 |
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