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JAN2N918

JAN2N918 Microsemi


8811-lds-0010-datasheet Hersteller: Microsemi
Bipolar Transistors - BJT Small-Signal BJT
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Technische Details JAN2N918 Microsemi

Description: TRANS NPN 15V 0.05A TO72, Packaging: Bulk, Package / Case: TO-72-3 Metal Can, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: -65°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 400mV @ 1mA, 10mA, Current - Collector Cutoff (Max): 1µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 3mA, 1V, Supplier Device Package: TO-72, Part Status: Discontinued at Digi-Key, Current - Collector (Ic) (Max): 50 mA, Voltage - Collector Emitter Breakdown (Max): 15 V, Power - Max: 200 mW, Grade: Military, Qualification: MIL-PRF-19500/301.

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JAN2N918 Hersteller : MSC 8811-lds-0010-datasheet
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JAN2N918 Hersteller : Microsemi lds-0010.pdf Trans RF BJT NPN 15V 0.05A 200mW 4-Pin TO-72 Bag
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JAN2N918 JAN2N918 Hersteller : Microchip Technology 8811-lds-0010-datasheet Description: TRANS NPN 15V 0.05A TO72
Packaging: Bulk
Package / Case: TO-72-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 3mA, 1V
Supplier Device Package: TO-72
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 200 mW
Grade: Military
Qualification: MIL-PRF-19500/301
Produkt ist nicht verfügbar