JANS1N5615US/TR Microchip Technology
Hersteller: Microchip Technology
Description: DIODE GEN PURP 200V 1A A SQ-MELF
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Grade: Military
Qualification: MIL-PRF-19500/429
Description: DIODE GEN PURP 200V 1A A SQ-MELF
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Grade: Military
Qualification: MIL-PRF-19500/429
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Technische Details JANS1N5615US/TR Microchip Technology
Description: DIODE GEN PURP 200V 1A A SQ-MELF, Packaging: Tape & Reel (TR), Package / Case: SQ-MELF, A, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 150 ns, Technology: Standard, Current - Average Rectified (Io): 1A, Supplier Device Package: A, SQ-MELF, Operating Temperature - Junction: -65°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 200 V, Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A, Grade: Military, Qualification: MIL-PRF-19500/429.
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Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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JANS1N5615US/TR | Hersteller : Microchip / Microsemi |
 Rectifiers UFR,FRR |
Produkt ist nicht verfügbar |