auf Bestellung 110 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 99.53 EUR |
| 10+ | 92.85 EUR |
| 25+ | 88.95 EUR |
| 100+ | 80.63 EUR |
| 250+ | 76.05 EUR |
| 500+ | 73.42 EUR |
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Technische Details JANS1N5806 Microchip / Microsemi
Description: DIODE GEN PURP 150V 1A AXIAL, Packaging: Bulk, Package / Case: A, Axial, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 25 ns, Technology: Standard, Capacitance @ Vr, F: 25pF @ 10V, 1MHz, Current - Average Rectified (Io): 1A, Supplier Device Package: A, Axial, Operating Temperature - Junction: -65°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 150 V, Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A, Current - Reverse Leakage @ Vr: 1 µA @ 150 V.
Weitere Produktangebote JANS1N5806 nach Preis ab 103.35 EUR bis 103.35 EUR
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JANS1N5806 | Hersteller : Microchip Technology |
Description: DIODE GEN PURP 150V 1A AXIAL Packaging: Bulk Package / Case: A, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Capacitance @ Vr, F: 25pF @ 10V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: A, Axial Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 150 V |
auf Bestellung 20 Stücke: Lieferzeit 21-28 Tag (e) |
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