Technische Details JANS1N5809 Microsemi
Description: DIODE STANDARD 100V 3A B AXIAL, Packaging: Bulk, Package / Case: B, Axial, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 30 ns, Technology: Standard, Capacitance @ Vr, F: 60pF @ 10V, 1MHz, Current - Average Rectified (Io): 3A, Operating Temperature - Junction: -65°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 100 V, Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A, Current - Reverse Leakage @ Vr: 5 µA @ 100 V, Supplier Device Package: B, Axial, Grade: Military, Qualification: MIL-PRF-19500/477.
Weitere Produktangebote JANS1N5809
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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| JANS1N5809 | Hersteller : Microsemi |
 Rectifier Diode Switching 100V 6A 30ns 2-Pin Case E Tray |
Produkt ist nicht verfügbar |
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JANS1N5809 | Hersteller : Microchip Technology |
Description: DIODE STANDARD 100V 3A B AXIAL Packaging: Bulk Package / Case: B, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Capacitance @ Vr, F: 60pF @ 10V, 1MHz Current - Average Rectified (Io): 3A Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A Current - Reverse Leakage @ Vr: 5 µA @ 100 V Supplier Device Package: B, Axial Grade: Military Qualification: MIL-PRF-19500/477 |
Produkt ist nicht verfügbar |