JANS1N6621/TR Microchip Technology
Hersteller: Microchip Technology
Description: DIODE GEN PURP 400V 2A A AXIAL
Current - Reverse Leakage @ Vr: 500 nA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.2 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: A, Axial
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 10pF @ 10V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 45 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: A, Axial
Packaging: Tape & Reel (TR)
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Technische Details JANS1N6621/TR Microchip Technology
Description: DIODE GEN PURP 400V 2A A AXIAL, Current - Reverse Leakage @ Vr: 500 nA @ 400 V, Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.2 A, Voltage - DC Reverse (Vr) (Max): 400 V, Part Status: Active, Operating Temperature - Junction: -65°C ~ 175°C, Supplier Device Package: A, Axial, Current - Average Rectified (Io): 2A, Capacitance @ Vr, F: 10pF @ 10V, 1MHz, Technology: Standard, Reverse Recovery Time (trr): 45 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Through Hole, Package / Case: A, Axial, Packaging: Tape & Reel (TR).