JANS2N5237S Microchip Technology
Hersteller: Microchip Technology
Description: NPN TRANSISTOR
Current - Collector Cutoff (Max): 10µA
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 1A, 10A
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Packaging: Bulk
Qualification: MIL-PRF-19500/394
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 120 V
Current - Collector (Ic) (Max): 10 A
Grade: Military
Supplier Device Package: TO-39 (TO-205AD)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 5A, 5V
Produktrezensionen
Produktbewertung abgeben
Technische Details JANS2N5237S Microchip Technology
Description: NPN TRANSISTOR, Current - Collector Cutoff (Max): 10µA, Vce Saturation (Max) @ Ib, Ic: 2.5V @ 1A, 10A, Operating Temperature: -65°C ~ 200°C (TJ), Transistor Type: NPN, Mounting Type: Through Hole, Package / Case: TO-205AD, TO-39-3 Metal Can, Packaging: Bulk, Qualification: MIL-PRF-19500/394, Power - Max: 1 W, Voltage - Collector Emitter Breakdown (Max): 120 V, Current - Collector (Ic) (Max): 10 A, Grade: Military, Supplier Device Package: TO-39 (TO-205AD), DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 5A, 5V.