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JANS2N5667S Microsemi


lds-0062.pdf Hersteller: Microsemi
Trans GP BJT NPN 300V 5A 1200mW 3-Pin TO-39 Tray
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Technische Details JANS2N5667S Microsemi

Description: TRANS NPN 300V 5A TO39, Packaging: Bulk, Package / Case: TO-205AD, TO-39-3 Metal Can, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: -65°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1V @ 1A, 5A, Current - Collector Cutoff (Max): 200nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 5V, Supplier Device Package: TO-39 (TO-205AD), Current - Collector (Ic) (Max): 5 A, Voltage - Collector Emitter Breakdown (Max): 300 V, Power - Max: 1.2 W.

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JANS2N5667S JANS2N5667S Hersteller : Microchip Technology Description: TRANS NPN 300V 5A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 1A, 5A
Current - Collector Cutoff (Max): 200nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 5V
Supplier Device Package: TO-39 (TO-205AD)
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 1.2 W
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JANS2N5667S Hersteller : Microchip / Microsemi LDS_0062-1593858.pdf Bipolar Transistors - BJT Power BJT
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