JANSR2N2222AUB/E10 Microchip Technology
Hersteller: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 800 mA
Supplier Device Package: UB
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Current - Collector Cutoff (Max): 50nA
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Packaging: Bulk
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Technische Details JANSR2N2222AUB/E10 Microchip Technology
Description: RH SMALL-SIGNAL BJT, Power - Max: 500 mW, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 800 mA, Supplier Device Package: UB, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V, Current - Collector Cutoff (Max): 50nA, Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA, Operating Temperature: -65°C ~ 200°C (TJ), Transistor Type: NPN, Mounting Type: Surface Mount, Package / Case: 3-SMD, No Lead, Packaging: Bulk.
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|---|---|---|---|---|---|
| JANSR2N2222AUB/E10 | Microchip / Microsemi |
 Bipolar Transistors - BJT 40V 800mA 500mW 3 Pin CER RH Small-Signal BJT TR |
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| JANSR2N2222AUB/E10 |
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Hersteller: Microchip / Microsemi
Bipolar Transistors - BJT 40V 800mA 500mW 3 Pin CER RH Small-Signal BJT TR
Bipolar Transistors - BJT 40V 800mA 500mW 3 Pin CER RH Small-Signal BJT TR
Produkt ist nicht verfügbar
Mindestbestellmenge: 12 Stücke
Im Einkaufswagen
Stück im Wert von UAH