JANSR2N2907A Microchip Technology
Hersteller: Microchip Technology
Description: TRANS PNP 60V 0.6A TO-18
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 600 mA
Part Status: Active
Supplier Device Package: TO-18 (TO-206AA)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Current - Collector Cutoff (Max): 50nA
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Packaging: Bulk
Qualification: MIL-PRF-19500/291
Grade: Military
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Technische Details JANSR2N2907A Microchip Technology
Description: TRANS PNP 60V 0.6A TO-18, Power - Max: 500 mW, Voltage - Collector Emitter Breakdown (Max): 60 V, Current - Collector (Ic) (Max): 600 mA, Part Status: Active, Supplier Device Package: TO-18 (TO-206AA), DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V, Current - Collector Cutoff (Max): 50nA, Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA, Operating Temperature: -65°C ~ 200°C (TJ), Transistor Type: PNP, Mounting Type: Through Hole, Package / Case: TO-206AA, TO-18-3 Metal Can, Packaging: Bulk, Qualification: MIL-PRF-19500/291, Grade: Military.
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| JANSR2N2907A | Microchip / Microsemi |
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Hersteller: Microchip / Microsemi
Bipolar Transistors - BJT 60V 600mA 500mW PNP RH Small-Signal BJT THT
Bipolar Transistors - BJT 60V 600mA 500mW PNP RH Small-Signal BJT THT
Produkt ist nicht verfügbar
Mindestbestellmenge: 50 Stücke
Im Einkaufswagen
Stück im Wert von UAH