JANSR2N3019 Microchip Technology
Hersteller: Microchip Technology
Description: TRANS NPN 80V 1A TO-5AA
Qualification: MIL-PRF-19500/391
Grade: Military
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Supplier Device Package: TO-5AA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 10V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-205AA, TO-5-3 Metal Can
Packaging: Bulk
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Technische Details JANSR2N3019 Microchip Technology
Description: TRANS NPN 80V 1A TO-5AA, Qualification: MIL-PRF-19500/391, Grade: Military, Power - Max: 800 mW, Voltage - Collector Emitter Breakdown (Max): 80 V, Current - Collector (Ic) (Max): 1 A, Part Status: Active, Supplier Device Package: TO-5AA, DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 10V, Current - Collector Cutoff (Max): 10µA (ICBO), Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA, Operating Temperature: -65°C ~ 200°C (TJ), Transistor Type: NPN, Mounting Type: Through Hole, Package / Case: TO-205AA, TO-5-3 Metal Can, Packaging: Bulk.
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| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
| JANSR2N3019 | Microchip / Microsemi |
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Im Einkaufswagen Stück im Wert von UAH |
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Hersteller: Microchip / Microsemi
Bipolar Transistors - BJT 80V 1A 800mW RH Small-Signal BJT THT
Bipolar Transistors - BJT 80V 1A 800mW RH Small-Signal BJT THT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH