JANSR2N3501UB Microchip Technology
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Technische Details JANSR2N3501UB Microchip Technology
Description: TRANS NPN 150V 0.3A UB, Packaging: Bulk, Package / Case: 4-SMD, No Lead, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: -65°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA, Current - Collector Cutoff (Max): 10µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V, Supplier Device Package: UB, Grade: Military, Current - Collector (Ic) (Max): 300 mA, Voltage - Collector Emitter Breakdown (Max): 150 V, Power - Max: 500 mW, Qualification: MIL-PRF-19500/366.
Weitere Produktangebote JANSR2N3501UB
Foto | Bezeichnung | Hersteller | Beschreibung |
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JANSR2N3501UB | Hersteller : Microchip Technology |
Description: TRANS NPN 150V 0.3A UB Packaging: Bulk Package / Case: 4-SMD, No Lead Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Supplier Device Package: UB Grade: Military Current - Collector (Ic) (Max): 300 mA Voltage - Collector Emitter Breakdown (Max): 150 V Power - Max: 500 mW Qualification: MIL-PRF-19500/366 |
Produkt ist nicht verfügbar |
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JANSR2N3501UB | Hersteller : Microchip Technology | Bipolar Transistors - BJT BJTs |
Produkt ist nicht verfügbar |
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JANSR2N3501UB | Hersteller : Microchip / Microsemi | Bipolar Transistors - BJT RH Small-Signal BJT |
Produkt ist nicht verfügbar |