Produktrezensionen
Produktbewertung abgeben
Technische Details JANTX1N5415 Microchip / Microsemi
Description: DIODE GEN PURP 50V 3A AXIAL, Packaging: Bulk, Package / Case: B, Axial, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 150 ns, Technology: Standard, Current - Average Rectified (Io): 3A, Supplier Device Package: B, Axial, Operating Temperature - Junction: -65°C ~ 175°C, Grade: Military, Voltage - DC Reverse (Vr) (Max): 50 V, Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A, Current - Reverse Leakage @ Vr: 1 µA @ 50 V, Qualification: MIL-PRF-19500/411.
Weitere Produktangebote JANTX1N5415
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
| JANTX1N5415 | MICROSEMI |
 E/FAST RECTIFIER (100-500NS) 1N5415Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| JANTX1N5415 | Semtech |
MIL 3A FAST RECTIFIER DISCR 1N5415 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
 |
JANTX1N5415 | Microchip Technology |
Description: DIODE GEN PURP 50V 3A AXIAL Packaging: Bulk Package / Case: B, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: B, Axial Operating Temperature - Junction: -65°C ~ 175°C Grade: Military Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A Current - Reverse Leakage @ Vr: 1 µA @ 50 V Qualification: MIL-PRF-19500/411 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 104 Stücke Im Einkaufswagen Stück im Wert von UAH |
| JANTX1N5415 |
|
Hersteller: Microchip Technology
Description: DIODE GEN PURP 50V 3A AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 50 V
Qualification: MIL-PRF-19500/411
Description: DIODE GEN PURP 50V 3A AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 50 V
Qualification: MIL-PRF-19500/411
Produkt ist nicht verfügbar
Mindestbestellmenge: 104 Stücke
Im Einkaufswagen
Stück im Wert von UAH