JANTX1N5806US/TR Microchip / Microsemi
| Anzahl | Privatkunde |
|---|---|
| 1+ | 12.59 EUR |
| 106+ | 11.69 EUR |
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Technische Details JANTX1N5806US/TR Microchip / Microsemi
Description: DIODE GEN PURP 150V 1A D-5A, Packaging: Tape & Reel (TR), Package / Case: SQ-MELF, A, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 25 ns, Technology: Standard, Capacitance @ Vr, F: 25pF @ 10V, 1MHz, Current - Average Rectified (Io): 1A, Supplier Device Package: D-5A, Operating Temperature - Junction: -65°C ~ 175°C, Grade: Military, Voltage - DC Reverse (Vr) (Max): 150 V, Voltage - Forward (Vf) (Max) @ If: 975 mV @ 2.5 A, Current - Reverse Leakage @ Vr: 1 µA @ 150 V, Qualification: MIL-PRF-19500/477.
Weitere Produktangebote JANTX1N5806US/TR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
 |
JANTX1N5806US/TR | Microchip Technology |
 Description: DIODE GEN PURP 150V 1A D-5APackaging: Tape & Reel (TR) Package / Case: SQ-MELF, A Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Capacitance @ Vr, F: 25pF @ 10V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: D-5A Operating Temperature - Junction: -65°C ~ 175°C Grade: Military Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 975 mV @ 2.5 A Current - Reverse Leakage @ Vr: 1 µA @ 150 V Qualification: MIL-PRF-19500/477 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 106 Stücke Im Einkaufswagen Stück im Wert von UAH |
| JANTX1N5806US/TR |
|
Hersteller: Microchip Technology
Description: DIODE GEN PURP 150V 1A D-5A
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 2.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Qualification: MIL-PRF-19500/477
Description: DIODE GEN PURP 150V 1A D-5A
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 2.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Qualification: MIL-PRF-19500/477
Produkt ist nicht verfügbar
Mindestbestellmenge: 106 Stücke
Im Einkaufswagen
Stück im Wert von UAH