JANTX1N5806US/TR Microchip / Microsemi
auf Bestellung 1000 Stücke:
Lieferzeit 308-322 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 4+ | 16.87 EUR |
| 106+ | 15.7 EUR |
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Technische Details JANTX1N5806US/TR Microchip / Microsemi
Description: DIODE GEN PURP 150V 1A D-5A, Packaging: Tape & Reel (TR), Package / Case: SQ-MELF, A, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 25 ns, Technology: Standard, Capacitance @ Vr, F: 25pF @ 10V, 1MHz, Current - Average Rectified (Io): 1A, Supplier Device Package: D-5A, Operating Temperature - Junction: -65°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 150 V, Voltage - Forward (Vf) (Max) @ If: 975 mV @ 2.5 A, Current - Reverse Leakage @ Vr: 1 µA @ 150 V.
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| Foto | Bezeichnung | Hersteller | Beschreibung |
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| JANTX1N5806US/TR | Hersteller : Microsemi |
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auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
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JANTX1N5806US/TR | Hersteller : Microchip Technology |
Description: DIODE GEN PURP 150V 1A D-5A Packaging: Tape & Reel (TR) Package / Case: SQ-MELF, A Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Capacitance @ Vr, F: 25pF @ 10V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: D-5A Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 975 mV @ 2.5 A Current - Reverse Leakage @ Vr: 1 µA @ 150 V |
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