JANTX2N1613L
Hersteller:
auf Bestellung 100 Stücke:
Lieferzeit 21-28 Tag (e)
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Technische Details JANTX2N1613L
Description: TRANS NPN 30V 0.5A TO-5AA, Power - Max: 800 mW, Voltage - Collector Emitter Breakdown (Max): 30 V, Packaging: Bulk, Qualification: MIL-PRF-19500/181, Grade: Military, Current - Collector (Ic) (Max): 500 mA, Part Status: Active, Supplier Device Package: TO-5AA, DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V, Current - Collector Cutoff (Max): 10µA (ICBO), Vce Saturation (Max) @ Ib, Ic: 1.5V @ 15mA, 150mA, Operating Temperature: -65°C ~ 200°C (TJ), Transistor Type: NPN, Mounting Type: Through Hole, Package / Case: TO-205AA, TO-5-3 Metal Can.
Weitere Produktangebote JANTX2N1613L
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
 |
JANTX2N1613L | Microchip Technology |
Description: TRANS NPN 30V 0.5A TO-5AA Power - Max: 800 mW Voltage - Collector Emitter Breakdown (Max): 30 V Packaging: Bulk Qualification: MIL-PRF-19500/181 Grade: Military Current - Collector (Ic) (Max): 500 mA Part Status: Active Supplier Device Package: TO-5AA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Current - Collector Cutoff (Max): 10µA (ICBO) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 15mA, 150mA Operating Temperature: -65°C ~ 200°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-205AA, TO-5-3 Metal Can |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH |
| JANTX2N1613L | Microchip / Microsemi |
Bipolar Transistors - BJT 30V 500mA 800mW NPN Long-Lead Power BJT THT |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH |
| JANTX2N1613L |
|
Hersteller: Microchip Technology
Description: TRANS NPN 30V 0.5A TO-5AA
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Packaging: Bulk
Qualification: MIL-PRF-19500/181
Grade: Military
Current - Collector (Ic) (Max): 500 mA
Part Status: Active
Supplier Device Package: TO-5AA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 15mA, 150mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-205AA, TO-5-3 Metal Can
Description: TRANS NPN 30V 0.5A TO-5AA
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Packaging: Bulk
Qualification: MIL-PRF-19500/181
Grade: Military
Current - Collector (Ic) (Max): 500 mA
Part Status: Active
Supplier Device Package: TO-5AA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 15mA, 150mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-205AA, TO-5-3 Metal Can
Produkt ist nicht verfügbar
Mindestbestellmenge: 100 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| JANTX2N1613L |
|
Hersteller: Microchip / Microsemi
Bipolar Transistors - BJT 30V 500mA 800mW NPN Long-Lead Power BJT THT
Bipolar Transistors - BJT 30V 500mA 800mW NPN Long-Lead Power BJT THT
Produkt ist nicht verfügbar
Mindestbestellmenge: 100 Stücke
Im Einkaufswagen
Stück im Wert von UAH