JANTX2N3501UB Microchip / Microsemi
Hersteller: Microchip / MicrosemiBipolar Transistors - BJT 150V 300mA 1W NPN 3 Pin CER Small-Signal BJT
auf Bestellung 71 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 37.40 EUR |
| 100+ | 34.72 EUR |
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Technische Details JANTX2N3501UB Microchip / Microsemi
Description: TRANS NPN 150V 0.3A UB, Packaging: Bulk, Package / Case: 3-SMD, No Lead, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: -65°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA, Current - Collector Cutoff (Max): 10µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V, Supplier Device Package: UB, Grade: Military, Current - Collector (Ic) (Max): 300 mA, Voltage - Collector Emitter Breakdown (Max): 150 V, Power - Max: 500 mW, Qualification: MIL-PRF-19500/366.
Weitere Produktangebote JANTX2N3501UB
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JANTX2N3501UB | Hersteller : Microchip Technology |
Bipolar Transistors - BJT BJTs |
auf Bestellung 74 Stücke: Lieferzeit 10-14 Tag (e) |
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| JANTX2N3501UB | Hersteller : MICROSEMI |
UB/NPN TRANSISTOR 2N3501 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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JANTX2N3501UB | Hersteller : Microchip Technology |
Description: TRANS NPN 150V 0.3A UB Packaging: Bulk Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Supplier Device Package: UB Grade: Military Current - Collector (Ic) (Max): 300 mA Voltage - Collector Emitter Breakdown (Max): 150 V Power - Max: 500 mW Qualification: MIL-PRF-19500/366 |
Produkt ist nicht verfügbar |