Produkte > MICROCHIP / MICROSEMI > Jantx2N3868S

Jantx2N3868S Microchip / Microsemi

2N386__2b2N3868S_LDS_0170_MIL_PRF_19500_350-3499845.pdf Hersteller: Microchip / Microsemi
Bipolar Transistors - BJT 60V 3mA 1W Short-Lead Power BJT THT
auf Bestellung 65 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+53.5 EUR
25+53.49 EUR
100+49.7 EUR
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details Jantx2N3868S Microchip / Microsemi

Description: TRANS PNP 60V 0.003A TO39, Packaging: Bulk, Package / Case: TO-205AD, TO-39-3 Metal Can, Mounting Type: Through Hole, Transistor Type: PNP, Operating Temperature: -65°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1.5V @ 250mA, 2.5A, Current - Collector Cutoff (Max): 100µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 1.5A, 2V, Supplier Device Package: TO-39 (TO-205AD), Grade: Military, Current - Collector (Ic) (Max): 3 mA, Voltage - Collector Emitter Breakdown (Max): 60 V, Power - Max: 1 W, Qualification: MIL-PRF-19500/350.

Weitere Produktangebote Jantx2N3868S

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
Jantx2N3868S Jantx2N3868S Hersteller : Microchip Technology 77282-lds-0170-datasheet Description: TRANS PNP 60V 0.003A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 250mA, 2.5A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 1.5A, 2V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Current - Collector (Ic) (Max): 3 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/350
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH