JANTX2N6301 Microchip / Microsemi
auf Bestellung 90 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 58.5 EUR |
| 10+ | 58.08 EUR |
| 25+ | 54.65 EUR |
| 100+ | 52.61 EUR |
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Technische Details JANTX2N6301 Microchip / Microsemi
Description: NPN TRANSISTOR, Packaging: Bulk, Package / Case: TO-213AA, TO-66-2, Mounting Type: Through Hole, Transistor Type: NPN - Darlington, Operating Temperature: -55°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 3V @ 80mA, 8A, Current - Collector Cutoff (Max): 500µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 4A, 3V, Supplier Device Package: TO-66 (TO-213AA), Part Status: Active, Current - Collector (Ic) (Max): 8 A, Voltage - Collector Emitter Breakdown (Max): 80 V, Power - Max: 75 W.
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JANTX2N6301 | Hersteller : Microchip Technology |
Trans Darlington NPN 80V 8A 75000mW 3-Pin(2+Tab) TO-66 Tray |
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| JANTX2N6301 | Hersteller : Microchip Technology |
Description: NPN TRANSISTOR Packaging: Bulk Package / Case: TO-213AA, TO-66-2 Mounting Type: Through Hole Transistor Type: NPN - Darlington Operating Temperature: -55°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 3V @ 80mA, 8A Current - Collector Cutoff (Max): 500µA DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 4A, 3V Supplier Device Package: TO-66 (TO-213AA) Part Status: Active Current - Collector (Ic) (Max): 8 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 75 W |
Produkt ist nicht verfügbar |