Technische Details JANTXV1N5417 MICROSEMI
Description: DIODE STANDARD 200V 3A B AXIAL, Packaging: Bulk, Package / Case: B, Axial, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 150 ns, Technology: Standard, Current - Average Rectified (Io): 3A, Supplier Device Package: B, Axial, Operating Temperature - Junction: -65°C ~ 175°C, Grade: Military, Voltage - DC Reverse (Vr) (Max): 200 V, Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A, Current - Reverse Leakage @ Vr: 1 µA @ 200 V, Qualification: MIL-PRF-19500/411.
Weitere Produktangebote JANTXV1N5417
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| JANTXV1N5417 | Hersteller : Semtech |
 Half Wave Rectifier Diode - 200V Axial Leaded Hermetically Sealed POWER DISCR 1N5417Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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JANTXV1N5417 | Hersteller : Microchip Technology |
Description: DIODE STANDARD 200V 3A B AXIAL Packaging: Bulk Package / Case: B, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: B, Axial Operating Temperature - Junction: -65°C ~ 175°C Grade: Military Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A Current - Reverse Leakage @ Vr: 1 µA @ 200 V Qualification: MIL-PRF-19500/411 |
Produkt ist nicht verfügbar |
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JANTXV1N5417 | Hersteller : Semtech |
ESD Suppressors / TVS Diodes D MET 3A FAST 200V HRV |
Produkt ist nicht verfügbar |