Technische Details JANTXV1N5809 MICROSEMI
Description: DIODE STANDARD 100V 3A B AXIAL, Packaging: Bulk, Package / Case: B, Axial, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 30 ns, Technology: Standard, Capacitance @ Vr, F: 65pF @ 10V, 1MHz, Current - Average Rectified (Io): 3A, Supplier Device Package: B, Axial, Operating Temperature - Junction: -65°C ~ 175°C, Grade: Military, Voltage - DC Reverse (Vr) (Max): 100 V, Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A, Current - Reverse Leakage @ Vr: 5 µA @ 100 V, Qualification: MIL-PRF-19500/477.
Weitere Produktangebote JANTXV1N5809
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JANTXV1N5809 | Hersteller : Microchip Technology |
 Description: DIODE STANDARD 100V 3A B AXIALPackaging: Bulk Package / Case: B, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Capacitance @ Vr, F: 65pF @ 10V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: B, Axial Operating Temperature - Junction: -65°C ~ 175°C Grade: Military Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A Current - Reverse Leakage @ Vr: 5 µA @ 100 V Qualification: MIL-PRF-19500/477 |
Produkt ist nicht verfügbar |
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JANTXV1N5809 | Hersteller : Microchip / Microsemi |
Rectifiers 100V 3A UFR,FRR THT |
Produkt ist nicht verfügbar |