JANTXV1N6620US MICROSEMI
Hersteller: MICROSEMIA_SQ_MELF/VOIDLESS-HERMETICALLY SEALED SURFACE MOUNT ULTRA FAST RECOVERY GL 1N6620
Anzahl je Verpackung: 1 Stücke
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Technische Details JANTXV1N6620US MICROSEMI
Description: DIODE GEN PURP 220V 1.2A D-5A, Packaging: Bulk, Package / Case: SQ-MELF, A, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 30 ns, Technology: Standard, Current - Average Rectified (Io): 1.2A, Supplier Device Package: D-5A, Operating Temperature - Junction: -65°C ~ 150°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 220 V, Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.2 A, Current - Reverse Leakage @ Vr: 500 nA @ 220 V.
Weitere Produktangebote JANTXV1N6620US
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JANTXV1N6620US | Hersteller : Microchip Technology |
Description: DIODE GEN PURP 220V 1.2A D-5A Packaging: Bulk Package / Case: SQ-MELF, A Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Current - Average Rectified (Io): 1.2A Supplier Device Package: D-5A Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 220 V Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.2 A Current - Reverse Leakage @ Vr: 500 nA @ 220 V |
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JANTXV1N6620US | Hersteller : Microsemi |
Rectifiers UFR,FRR |
Produkt ist nicht verfügbar |