JANTXV1N6628US Microchip Technology
Hersteller: Microchip Technology
Description: DIODE GEN PURP 660V 1.75A D-5B
Qualification: MIL-PRF-19500/590
Current - Reverse Leakage @ Vr: 2 µA @ 660 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 660 V
Grade: Military
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: D-5B
Current - Average Rectified (Io): 1.75A
Capacitance @ Vr, F: 40pF @ 10V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SQ-MELF, E
Packaging: Bulk
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Technische Details JANTXV1N6628US Microchip Technology
Description: DIODE GEN PURP 660V 1.75A D-5B, Qualification: MIL-PRF-19500/590, Current - Reverse Leakage @ Vr: 2 µA @ 660 V, Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A, Voltage - DC Reverse (Vr) (Max): 660 V, Grade: Military, Operating Temperature - Junction: -65°C ~ 150°C, Supplier Device Package: D-5B, Current - Average Rectified (Io): 1.75A, Capacitance @ Vr, F: 40pF @ 10V, 1MHz, Technology: Standard, Reverse Recovery Time (trr): 30 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: SQ-MELF, E, Packaging: Bulk.