JANTXV1N6661US Microchip Technology
Hersteller: Microchip Technology
Description: DIODE GEN PURP 225V 500MA D-5A
Qualification: MIL-PRF-19500/587
Current - Reverse Leakage @ Vr: 50 nA @ 225 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 400 mA
Voltage - DC Reverse (Vr) (Max): 225 V
Grade: Military
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: D-5A
Current - Average Rectified (Io): 500mA
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Packaging: Bulk
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Technische Details JANTXV1N6661US Microchip Technology
Description: DIODE GEN PURP 225V 500MA D-5A, Qualification: MIL-PRF-19500/587, Current - Reverse Leakage @ Vr: 50 nA @ 225 V, Voltage - Forward (Vf) (Max) @ If: 1 V @ 400 mA, Voltage - DC Reverse (Vr) (Max): 225 V, Grade: Military, Operating Temperature - Junction: -65°C ~ 175°C, Supplier Device Package: D-5A, Current - Average Rectified (Io): 500mA, Technology: Standard, Speed: Standard Recovery >500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: SQ-MELF, A, Packaging: Bulk.