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JANTXV2N1613L

JANTXV2N1613L Microchip Technology


123516-lds-0200-datasheet Hersteller: Microchip Technology
Description: TRANS NPN 30V 0.5A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 15mA, 150mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-39
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 800 mW
Qualification: MIL-PRF-19500/181
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Technische Details JANTXV2N1613L Microchip Technology

Description: TRANS NPN 30V 0.5A TO39, Packaging: Bulk, Package / Case: TO-205AD, TO-39-3 Metal Can, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: -65°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1.5V @ 15mA, 150mA, Current - Collector Cutoff (Max): 10µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V, Supplier Device Package: TO-39, Grade: Military, Part Status: Active, Current - Collector (Ic) (Max): 500 mA, Voltage - Collector Emitter Breakdown (Max): 30 V, Power - Max: 800 mW, Qualification: MIL-PRF-19500/181.

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JANTXV2N1613L 123516-lds-0200-datasheet
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Lieferzeit 21-28 Tag (e)
JANTXV2N1613L Hersteller : Microchip / Microsemi LDS_0200-1661333.pdf Bipolar Transistors - BJT Power BJT
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