JANTXV2N5339P
Hersteller:
auf Bestellung 100 Stücke:
Lieferzeit 21-28 Tag (e)
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Technische Details JANTXV2N5339P
Description: POWER BJT, Current - Collector (Ic) (Max): 5 A, Part Status: Active, Supplier Device Package: TO-39 (TO-205AD), DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 2V, Current - Collector Cutoff (Max): 100µA, Vce Saturation (Max) @ Ib, Ic: 1.2V @ 500mA, 5A, Operating Temperature: -55°C ~ 200°C, Transistor Type: NPN, Mounting Type: Through Hole, Package / Case: TO-205AD, TO-39-3 Metal Can, Packaging: Bulk, Power - Max: 1 W, Voltage - Collector Emitter Breakdown (Max): 100 V.
Weitere Produktangebote JANTXV2N5339P
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
 |
JANTXV2N5339P | Microchip Technology |
Description: POWER BJT Current - Collector (Ic) (Max): 5 A Part Status: Active Supplier Device Package: TO-39 (TO-205AD) DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 2V Current - Collector Cutoff (Max): 100µA Vce Saturation (Max) @ Ib, Ic: 1.2V @ 500mA, 5A Operating Temperature: -55°C ~ 200°C Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Packaging: Bulk Power - Max: 1 W Voltage - Collector Emitter Breakdown (Max): 100 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH |
| JANTXV2N5339P | Microchip / Microsemi | Bipolar Transistors - BJT Power BJT |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH |
| JANTXV2N5339P |
Hersteller: Microchip Technology
Description: POWER BJT
Current - Collector (Ic) (Max): 5 A
Part Status: Active
Supplier Device Package: TO-39 (TO-205AD)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 2V
Current - Collector Cutoff (Max): 100µA
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 500mA, 5A
Operating Temperature: -55°C ~ 200°C
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Packaging: Bulk
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Description: POWER BJT
Current - Collector (Ic) (Max): 5 A
Part Status: Active
Supplier Device Package: TO-39 (TO-205AD)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 2V
Current - Collector Cutoff (Max): 100µA
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 500mA, 5A
Operating Temperature: -55°C ~ 200°C
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Packaging: Bulk
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 100 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| JANTXV2N5339P |
Hersteller: Microchip / Microsemi
Bipolar Transistors - BJT Power BJT
Bipolar Transistors - BJT Power BJT
Produkt ist nicht verfügbar
Mindestbestellmenge: 100 Stücke
Im Einkaufswagen
Stück im Wert von UAH