JANTXV2N5339P
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auf Bestellung 100 Stücke:
Lieferzeit 21-28 Tag (e)
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Technische Details JANTXV2N5339P
Description: POWER BJT, Packaging: Bulk, Package / Case: TO-205AD, TO-39-3 Metal Can, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: -55°C ~ 200°C, Vce Saturation (Max) @ Ib, Ic: 1.2V @ 500mA, 5A, Current - Collector Cutoff (Max): 100µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 2V, Supplier Device Package: TO-39 (TO-205AD), Part Status: Active, Current - Collector (Ic) (Max): 5 A, Voltage - Collector Emitter Breakdown (Max): 100 V, Power - Max: 1 W.
Weitere Produktangebote JANTXV2N5339P
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JANTXV2N5339P | Hersteller : Microchip Technology |
Description: POWER BJT Packaging: Bulk Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 200°C Vce Saturation (Max) @ Ib, Ic: 1.2V @ 500mA, 5A Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 2V Supplier Device Package: TO-39 (TO-205AD) Part Status: Active Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 1 W |
Produkt ist nicht verfügbar |
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| JANTXV2N5339P | Hersteller : Microchip / Microsemi | Bipolar Transistors - BJT Power BJT |
Produkt ist nicht verfügbar |