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JANTXV2N5667

2N5664-65%2C66%28S%2CU3%29%2C67%28S%29.pdf
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Technische Details JANTXV2N5667

Description: TRANS NPN 300V 5A TO-5, Packaging: Bulk, Package / Case: TO-205AA, TO-5-3 Metal Can, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: -65°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1V @ 1A, 5A, Current - Collector Cutoff (Max): 200nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 5V, Supplier Device Package: TO-5, Grade: Military, Part Status: Active, Current - Collector (Ic) (Max): 5 A, Voltage - Collector Emitter Breakdown (Max): 300 V, Power - Max: 1.2 W, Qualification: MIL-PRF-19500/455.

Weitere Produktangebote JANTXV2N5667

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Preis
JANTXV2N5667 JANTXV2N5667 Microchip Technology 2N5664-65%2C66%28S%2CU3%29%2C67%28S%29.pdf Description: TRANS NPN 300V 5A TO-5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 1A, 5A
Current - Collector Cutoff (Max): 200nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 5V
Supplier Device Package: TO-5
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 1.2 W
Qualification: MIL-PRF-19500/455
Produkt ist nicht verfügbar
 Mindestbestellmenge: 100 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
JANTXV2N5667 Microchip / Microsemi 2N5664_2N5667U3_LDS_0062_MIL_PRF_19500_455-3499986.pdf Bipolar Transistors - BJT 300V 5A 1.2W NPN Power BJT THT
Produkt ist nicht verfügbar
 Mindestbestellmenge: 100 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
JANTXV2N5667 2N5664-65%2C66%28S%2CU3%29%2C67%28S%29.pdf
JANTXV2N5667
Hersteller: Microchip Technology
Description: TRANS NPN 300V 5A TO-5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 1A, 5A
Current - Collector Cutoff (Max): 200nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 5V
Supplier Device Package: TO-5
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 1.2 W
Qualification: MIL-PRF-19500/455
Produkt ist nicht verfügbar
Mindestbestellmenge: 100 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
JANTXV2N5667 2N5664_2N5667U3_LDS_0062_MIL_PRF_19500_455-3499986.pdf
Hersteller: Microchip / Microsemi
Bipolar Transistors - BJT 300V 5A 1.2W NPN Power BJT THT
Produkt ist nicht verfügbar
Mindestbestellmenge: 100 Stücke
Im Einkaufswagen  Stück im Wert von  UAH