Jantxv2N6059 Microchip Technology
Hersteller: Microchip Technology
Description: TRANS NPN DARL 100V 12A TO3
Packaging: Bulk
Package / Case: TO-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 120mA, 12A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 6A, 3V
Supplier Device Package: TO-3 (TO-204AA)
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 150 W
Qualification: MIL-PRF-19500/502
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Technische Details Jantxv2N6059 Microchip Technology
Description: TRANS NPN DARL 100V 12A TO3, Packaging: Bulk, Package / Case: TO-3, Mounting Type: Through Hole, Transistor Type: NPN - Darlington, Operating Temperature: -55°C ~ 175°C (TJ), Vce Saturation (Max) @ Ib, Ic: 3V @ 120mA, 12A, Current - Collector Cutoff (Max): 1mA, DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 6A, 3V, Supplier Device Package: TO-3 (TO-204AA), Grade: Military, Part Status: Active, Current - Collector (Ic) (Max): 12 A, Voltage - Collector Emitter Breakdown (Max): 100 V, Power - Max: 150 W, Qualification: MIL-PRF-19500/502.
Weitere Produktangebote Jantxv2N6059
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
| Jantxv2N6059 | Microchip / Microsemi |
Darlington Transistors 100V 12A 150W NPN Power BJT THT |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH |
| Jantxv2N6059 |
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Hersteller: Microchip / Microsemi
Darlington Transistors 100V 12A 150W NPN Power BJT THT
Darlington Transistors 100V 12A 150W NPN Power BJT THT
Produkt ist nicht verfügbar
Mindestbestellmenge: 100 Stücke
Im Einkaufswagen
Stück im Wert von UAH