K4B1G1646I-BYMA000 Samsung Semiconductor, Inc.
Hersteller: Samsung Semiconductor, Inc.
Description: DDR3-1866 1GB (64MX16)1.07NS CL1
Packaging: Tray
Package / Case: 96-TFBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 95°C
Voltage - Supply: 1.35V
Clock Frequency: 933 MHz
Memory Format: DRAM
Memory Interface: Parallel
Memory Organization: 64M x 16
DigiKey Programmable: Not Verified
Description: DDR3-1866 1GB (64MX16)1.07NS CL1
Packaging: Tray
Package / Case: 96-TFBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 95°C
Voltage - Supply: 1.35V
Clock Frequency: 933 MHz
Memory Format: DRAM
Memory Interface: Parallel
Memory Organization: 64M x 16
DigiKey Programmable: Not Verified
auf Bestellung 1082 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 224+ | 5.07 EUR |
| 672+ | 4.64 EUR |
| 896+ | 4.22 EUR |
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Technische Details K4B1G1646I-BYMA000 Samsung Semiconductor, Inc.
Description: DDR3-1866 1GB (64MX16)1.07NS CL1, Packaging: Tray, Package / Case: 96-TFBGA, Mounting Type: Surface Mount, Memory Size: 1Gbit, Memory Type: Volatile, Operating Temperature: 0°C ~ 95°C, Voltage - Supply: 1.35V, Clock Frequency: 933 MHz, Memory Format: DRAM, Memory Interface: Parallel, Memory Organization: 64M x 16, DigiKey Programmable: Not Verified.