Produkte > VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION > KBP02M-E4/45
KBP02M-E4/45

KBP02M-E4/45 Vishay General Semiconductor - Diodes Division

KBP005M_thru_10M%2C%203N246_thru_52.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 200V 1.5A KBPM
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Average Rectified (Io): 1.5 A
Voltage - Peak Reverse (Max): 200 V
Part Status: Obsolete
Supplier Device Package: KBPM
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, KBPM
Packaging: Tube
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Technische Details KBP02M-E4/45 Vishay General Semiconductor - Diodes Division

Description: BRIDGE RECT 1P 200V 1.5A KBPM, Current - Reverse Leakage @ Vr: 5 µA @ 200 V, Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A, Current - Average Rectified (Io): 1.5 A, Voltage - Peak Reverse (Max): 200 V, Part Status: Obsolete, Supplier Device Package: KBPM, Technology: Standard, Operating Temperature: -55°C ~ 150°C (TJ), Diode Type: Single Phase, Mounting Type: Through Hole, Package / Case: 4-SIP, KBPM, Packaging: Tube.