KBP207G C2G Taiwan Semiconductor Corporation


KBP201G-KBP207G _E13_DS.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 1KV 2A KBP
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 2 A
Current - Average Rectified (Io): 2 A
Voltage - Peak Reverse (Max): 1 kV
Part Status: Obsolete
Supplier Device Package: KBP
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, KBP
Packaging: Tube
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Technische Details KBP207G C2G Taiwan Semiconductor Corporation

Description: BRIDGE RECT 1PHASE 1KV 2A KBP, Current - Reverse Leakage @ Vr: 10 µA @ 1000 V, Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 2 A, Current - Average Rectified (Io): 2 A, Voltage - Peak Reverse (Max): 1 kV, Part Status: Obsolete, Supplier Device Package: KBP, Technology: Standard, Operating Temperature: -55°C ~ 150°C (TJ), Diode Type: Single Phase, Mounting Type: Through Hole, Package / Case: 4-SIP, KBP, Packaging: Tube.