KBU1003G Taiwan Semiconductor
auf Bestellung 499 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 2.94 EUR |
| 10+ | 2.45 EUR |
| 100+ | 1.94 EUR |
| 500+ | 1.4 EUR |
| 2500+ | 1.36 EUR |
| 5000+ | 1.33 EUR |
| 10000+ | 1.31 EUR |
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Technische Details KBU1003G Taiwan Semiconductor
Description: BRIDGE RECT 1PHASE 200V 10A KBU, Packaging: Tray, Package / Case: 4-SIP, KBU, Mounting Type: Through Hole, Diode Type: Single Phase, Operating Temperature: -55°C ~ 150°C (TJ), Technology: Standard, Supplier Device Package: KBU, Part Status: Active, Voltage - Peak Reverse (Max): 200 V, Current - Average Rectified (Io): 10 A, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A, Current - Reverse Leakage @ Vr: 5 µA @ 200 V.
Weitere Produktangebote KBU1003G
| Foto | Bezeichnung | Hersteller | Beschreibung |
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KBU1003G | Hersteller : Taiwan Semiconductor Corporation |
 Description: BRIDGE RECT 1PHASE 200V 10A KBUPackaging: Tray Package / Case: 4-SIP, KBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: KBU Part Status: Active Voltage - Peak Reverse (Max): 200 V Current - Average Rectified (Io): 10 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
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