KBU803G Taiwan Semiconductor
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Technische Details KBU803G Taiwan Semiconductor
Description: BRIDGE RECT 1PHASE 200V 8A KBU, Packaging: Tray, Package / Case: 4-SIP, KBU, Mounting Type: Through Hole, Diode Type: Single Phase, Operating Temperature: -55°C ~ 150°C (TJ), Technology: Standard, Supplier Device Package: KBU, Part Status: Active, Voltage - Peak Reverse (Max): 200 V, Current - Average Rectified (Io): 8 A, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A, Current - Reverse Leakage @ Vr: 5 µA @ 200 V.
Weitere Produktangebote KBU803G
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KBU803G | Hersteller : Taiwan Semiconductor Corporation |
 Description: BRIDGE RECT 1PHASE 200V 8A KBUPackaging: Tray Package / Case: 4-SIP, KBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: KBU Part Status: Active Voltage - Peak Reverse (Max): 200 V Current - Average Rectified (Io): 8 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
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KBU803G | Hersteller : Taiwan Semiconductor |
Bridge Rectifiers 8A, 200V, Standard Bridge Rectifier |
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| KBU803G | Hersteller : TAIWAN SEMICONDUCTOR |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 200V; If: 8A; Ifsm: 200A Type of bridge rectifier: single-phase Max. off-state voltage: 200V Load current: 8A Max. forward impulse current: 200A Version: flat Case: KBU Electrical mounting: THT Leads: round pin Kind of package: in-tray Max. forward voltage: 1.1V Features of semiconductor devices: glass passivated |
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