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KSB1116LTA

KSB1116LTA onsemi

KSB1116A.pdf
Hersteller: onsemi
Description: TRANS PNP 50V 1A TO-92-3
Power - Max: 750 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: TO-92-3
Frequency - Transition: 120MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Tape & Box (TB)
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Technische Details KSB1116LTA onsemi

Description: TRANS PNP 50V 1A TO-92-3, Power - Max: 750 mW, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 1 A, Supplier Device Package: TO-92-3, Frequency - Transition: 120MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V, Current - Collector Cutoff (Max): 100nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A, Operating Temperature: 150°C (TJ), Transistor Type: PNP, Mounting Type: Through Hole, Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads, Packaging: Tape & Box (TB).