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KSB810YTA

KSB810YTA onsemi

KSB810.PDF
Hersteller: onsemi
Description: TRANS PNP 25V 0.7A TO92S
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Short Body
Packaging: Tape & Box (TB)
Power - Max: 350 mW
Voltage - Collector Emitter Breakdown (Max): 25 V
Current - Collector (Ic) (Max): 700 mA
Supplier Device Package: TO-92S
Frequency - Transition: 160MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 70mA, 700mA
Operating Temperature: 150°C (TJ)
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Technische Details KSB810YTA onsemi

Description: TRANS PNP 25V 0.7A TO92S, Transistor Type: PNP, Mounting Type: Through Hole, Package / Case: TO-226-3, TO-92-3 Short Body, Packaging: Tape & Box (TB), Power - Max: 350 mW, Voltage - Collector Emitter Breakdown (Max): 25 V, Current - Collector (Ic) (Max): 700 mA, Supplier Device Package: TO-92S, Frequency - Transition: 160MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V, Current - Collector Cutoff (Max): 100nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 400mV @ 70mA, 700mA, Operating Temperature: 150°C (TJ).