KSC1008CYTA ON Semiconductor
| Anzahl | Preis |
|---|---|
| 2000+ | 0.085 EUR |
| 4000+ | 0.081 EUR |
| 8000+ | 0.077 EUR |
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Technische Details KSC1008CYTA ON Semiconductor
Description: TRANS NPN 60V 0.7A TO-92-3, Packaging: Tape & Box (TB), Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 50mA, 2V, Frequency - Transition: 50MHz, Supplier Device Package: TO-92-3, Current - Collector (Ic) (Max): 700 mA, Voltage - Collector Emitter Breakdown (Max): 60 V, Power - Max: 800 mW.
Weitere Produktangebote KSC1008CYTA nach Preis ab 0.084 EUR bis 0.58 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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KSC1008CYTA | ON Semiconductor |
Trans GP BJT NPN 60V 0.7A 800mW 3-Pin TO-92 Fan-Fold |
auf Bestellung 9245 Stücke: Lieferzeit 14-21 Tag (e) |
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KSC1008CYTA | ON Semiconductor |
Trans GP BJT NPN 60V 0.7A 800mW 3-Pin TO-92 Fan-Fold |
auf Bestellung 6289 Stücke: Lieferzeit 14-21 Tag (e) |
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KSC1008CYTA | onsemi |
Description: TRANS NPN 60V 0.7A TO-92-3Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 50mA, 2V Frequency - Transition: 50MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 700 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 800 mW |
auf Bestellung 12000 Stücke: Lieferzeit 10-14 Tag (e) |
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KSC1008CYTA | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 60V; 0.7A; 0.8W; TO92 Formed Mounting: THT Collector current: 0.7A Power dissipation: 0.8W Collector-emitter voltage: 60V Current gain: 120...240 Frequency: 50MHz Kind of package: Ammo Pack Polarisation: bipolar Type of transistor: NPN Case: TO92 Formed |
auf Bestellung 1266 Stücke: Lieferzeit 14-21 Tag (e) |
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KSC1008CYTA | onsemi / Fairchild |
Bipolar Transistors - BJT NPN Epitaxial Transistor |
auf Bestellung 7499 Stücke: Lieferzeit 10-14 Tag (e) |
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KSC1008CYTA | onsemi |
Bipolar Transistors - BJT NPN Epitaxial Transistor |
auf Bestellung 6130 Stücke: Lieferzeit 10-14 Tag (e) |
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KSC1008CYTA | onsemi |
Description: TRANS NPN 60V 0.7A TO-92-3Packaging: Cut Tape (CT) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 50mA, 2V Frequency - Transition: 50MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 700 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 800 mW |
auf Bestellung 1604 Stücke: Lieferzeit 10-14 Tag (e) |
|
| KSC1008CYTA |
![]() |
Hersteller: ON Semiconductor
Trans GP BJT NPN 60V 0.7A 800mW 3-Pin TO-92 Fan-Fold
Trans GP BJT NPN 60V 0.7A 800mW 3-Pin TO-92 Fan-Fold
auf Bestellung 9245 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 5339+ | 0.1 EUR |
| KSC1008CYTA |
![]() |
Hersteller: ON Semiconductor
Trans GP BJT NPN 60V 0.7A 800mW 3-Pin TO-92 Fan-Fold
Trans GP BJT NPN 60V 0.7A 800mW 3-Pin TO-92 Fan-Fold
auf Bestellung 6289 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 5339+ | 0.1 EUR |
| KSC1008CYTA |
![]() |
Hersteller: onsemi
Description: TRANS NPN 60V 0.7A TO-92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 50mA, 2V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 700 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 800 mW
Description: TRANS NPN 60V 0.7A TO-92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 50mA, 2V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 700 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 800 mW
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2000+ | 0.13 EUR |
| 4000+ | 0.11 EUR |
| KSC1008CYTA |
![]() |
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 0.7A; 0.8W; TO92 Formed
Mounting: THT
Collector current: 0.7A
Power dissipation: 0.8W
Collector-emitter voltage: 60V
Current gain: 120...240
Frequency: 50MHz
Kind of package: Ammo Pack
Polarisation: bipolar
Type of transistor: NPN
Case: TO92 Formed
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 0.7A; 0.8W; TO92 Formed
Mounting: THT
Collector current: 0.7A
Power dissipation: 0.8W
Collector-emitter voltage: 60V
Current gain: 120...240
Frequency: 50MHz
Kind of package: Ammo Pack
Polarisation: bipolar
Type of transistor: NPN
Case: TO92 Formed
auf Bestellung 1266 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 239+ | 0.3 EUR |
| 317+ | 0.23 EUR |
| 538+ | 0.13 EUR |
| 633+ | 0.11 EUR |
| 770+ | 0.093 EUR |
| 1000+ | 0.084 EUR |
| KSC1008CYTA |
![]() |
Hersteller: onsemi / Fairchild
Bipolar Transistors - BJT NPN Epitaxial Transistor
Bipolar Transistors - BJT NPN Epitaxial Transistor
auf Bestellung 7499 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 7+ | 0.43 EUR |
| 10+ | 0.29 EUR |
| 100+ | 0.15 EUR |
| 1000+ | 0.14 EUR |
| 2000+ | 0.11 EUR |
| 10000+ | 0.1 EUR |
| 24000+ | 0.093 EUR |
| KSC1008CYTA |
![]() |
Hersteller: onsemi
Bipolar Transistors - BJT NPN Epitaxial Transistor
Bipolar Transistors - BJT NPN Epitaxial Transistor
auf Bestellung 6130 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 0.58 EUR |
| 10+ | 0.36 EUR |
| 100+ | 0.23 EUR |
| 500+ | 0.17 EUR |
| 1000+ | 0.15 EUR |
| KSC1008CYTA |
![]() |
Hersteller: onsemi
Description: TRANS NPN 60V 0.7A TO-92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 50mA, 2V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 700 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 800 mW
Description: TRANS NPN 60V 0.7A TO-92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 50mA, 2V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 700 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 800 mW
auf Bestellung 1604 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 31+ | 0.58 EUR |
| 49+ | 0.36 EUR |
| 100+ | 0.23 EUR |
| 500+ | 0.17 EUR |
| 1000+ | 0.15 EUR |





