KSC1008CYTA onsemi
Hersteller: onsemiDescription: TRANS NPN 60V 0.7A TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 50mA, 2V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 700 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 800 mW
auf Bestellung 52000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2000+ | 0.13 EUR |
| 6000+ | 0.12 EUR |
| 10000+ | 0.11 EUR |
| 50000+ | 0.086 EUR |
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Produktbewertung abgeben
Technische Details KSC1008CYTA onsemi
Description: TRANS NPN 60V 0.7A TO92-3, Packaging: Tape & Box (TB), Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 50mA, 2V, Frequency - Transition: 50MHz, Supplier Device Package: TO-92-3, Current - Collector (Ic) (Max): 700 mA, Voltage - Collector Emitter Breakdown (Max): 60 V, Power - Max: 800 mW.
Weitere Produktangebote KSC1008CYTA nach Preis ab 0.099 EUR bis 0.7 EUR
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KSC1008CYTA | Hersteller : onsemi / Fairchild |
Bipolar Transistors - BJT NPN Epitaxial Transistor |
auf Bestellung 6824 Stücke: Lieferzeit 10-14 Tag (e) |
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KSC1008CYTA | Hersteller : onsemi |
Description: TRANS NPN 60V 0.7A TO92-3 Packaging: Cut Tape (CT) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 50mA, 2V Frequency - Transition: 50MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 700 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 800 mW |
auf Bestellung 41153 Stücke: Lieferzeit 10-14 Tag (e) |
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KSC1008CYTA | Hersteller : ONSEMI |
Description: ONSEMI - KSC1008CYTA - Bipolarer Einzeltransistor (BJT), NPN, 60 V, 700 mA, 800 mW, TO-92, Durchsteckmontage tariffCode: 85412900 productTraceability: Yes-Date/Lot Code Kollektor-Emitter-Spannung, max.: 60V rohsCompliant: YES Verlustleistung: 800mW Anzahl der Pins: 3Pin(s) euEccn: NLR DC-Stromverstärkung (hFE), min.: 120hFE hazardous: false Übergangsfrequenz: 30MHz rohsPhthalatesCompliant: YES Betriebstemperatur, max.: 150°C usEccn: EAR99 Dauer-Kollektorstrom: 700mA |
auf Bestellung 15250 Stücke: Lieferzeit 14-21 Tag (e) |
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KSC1008CYTA | Hersteller : ON Semiconductor |
Trans GP BJT NPN 60V 0.7A 800mW 3-Pin TO-92 Fan-Fold |
Produkt ist nicht verfügbar |
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KSC1008CYTA | Hersteller : ON Semiconductor |
Trans GP BJT NPN 60V 0.7A 800mW 3-Pin TO-92 Fan-Fold |
Produkt ist nicht verfügbar |
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KSC1008CYTA | Hersteller : ON Semiconductor |
Trans GP BJT NPN 60V 0.7A 800mW 3-Pin TO-92 Fan-Fold |
Produkt ist nicht verfügbar |
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| KSC1008CYTA | Hersteller : ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 60V; 0.7A; 0.8W; TO92 Mounting: THT Case: TO92 Kind of package: Ammo Pack Power dissipation: 0.8W Polarisation: bipolar Frequency: 50MHz Collector-emitter voltage: 60V Current gain: 120...240 Collector current: 0.7A Type of transistor: NPN Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| KSC1008CYTA | Hersteller : ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 60V; 0.7A; 0.8W; TO92 Mounting: THT Case: TO92 Kind of package: Ammo Pack Power dissipation: 0.8W Polarisation: bipolar Frequency: 50MHz Collector-emitter voltage: 60V Current gain: 120...240 Collector current: 0.7A Type of transistor: NPN |
Produkt ist nicht verfügbar |