KSC5502DTTU

KSC5502DTTU onsemi / Fairchild


KSC5502DT_D-1810568.pdf Hersteller: onsemi / Fairchild
Bipolar Transistors - BJT NPN Trip Dif Planar Silicon Transistor
auf Bestellung 3025 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+2.36 EUR
10+2.13 EUR
100+1.65 EUR
500+1.36 EUR
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Technische Details KSC5502DTTU onsemi / Fairchild

Description: TRANS NPN 600V 2A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1.5V @ 200mA, 1A, Current - Collector Cutoff (Max): 100µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 4 @ 1A, 1V, Frequency - Transition: 11MHz, Supplier Device Package: TO-220-3, Current - Collector (Ic) (Max): 2 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Power - Max: 50 W.

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KSC5502DTTU KSC5502DTTU Hersteller : onsemi ksc5502dt-d.pdf Description: TRANS NPN 600V 2A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 200mA, 1A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 4 @ 1A, 1V
Frequency - Transition: 11MHz
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 50 W
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