KSD1616GTA
Hersteller: auf Bestellung 32500 Stücke:
Lieferzeit 21-28 Tag (e)
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Technische Details KSD1616GTA
Description: TRANS NPN 50V 1A TO92-3, Packaging: Tape & Box (TB), Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V, Frequency - Transition: 160MHz, Supplier Device Package: TO-92-3, Current - Collector (Ic) (Max): 1 A, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 750 mW.
Weitere Produktangebote KSD1616GTA
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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| KSD1616-GTA |
auf Bestellung 2022 Stücke: Lieferzeit 21-28 Tag (e) |
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KSD1616GTA | Hersteller : ON Semiconductor |
Trans GP BJT NPN 50V 1A 3-Pin TO-92 Ammo |
Produkt ist nicht verfügbar |
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KSD1616GTA | Hersteller : onsemi |
Description: TRANS NPN 50V 1A TO92-3 Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V Frequency - Transition: 160MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 750 mW |
Produkt ist nicht verfügbar |